Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films

Abstract

The nature of electron and hole trapping in silicon ion–implanted silicon oxide (SiO2) with a dose of 1016 cm−2 were studied using photoluminescence and electron spin resonance (ESR) measurements. We observed an ESR signal with g = 2.006 after hole and electron injections. These results unambiguously imply that the Si nanoclusters created by the high-dose Si implants are both electron and hole traps in the SiO2 films.