Abstract
The potential of the GaInNAs/GaAs material system for the fabrication of tunable devices based on the quantum confined Stark effect is investigated. Transfer matrix calculations are presented to show that the band alignment is ideal for such applications since the large conduction band offset and heavier electron effective mass limit electron tunnelling and exciton quenching in the presence of an electric field. Optical transitions up to the third confined energy levels (3e–3h) were observed by electroreflectance spectroscopy in a Ga0.84In0.16N0.02As0.98:Sb/ GaAs p–i–n multi-quantum well structure. A 12 meV Stark shift of the fundamental transition is found experimentally with an estimated applied electric field of 60 kV/cm, in good agreement with an effective well width calculation.
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