Abstract
Boron doped nanocrystalline-Si:H/a-SiCx:H (nc-Si:H/a-SiCx:H) quantum dot superlattice has been prepared by plasma enhanced chemical vapor deposition at a low temperature of 150°C. This method for fabricating superlattice allows controlling both the size and density of Si quantum dots in potential well and the characteristics of potential barrier without subsequent annealing treatment. Cross-section high resolution transmission electron microscopy investigations confirm the periodic multi-layer structure of silicon quantum dots (~2nm diameter) separated by a-SiCx:H matrix (2–3nm thickness) with sharp interface. With strong blue photoluminescence and high perpendicular conductivity, boron doped nc-Si:H/a-SiCx:H quantum dot superlattice shows great advantages in obtaining applicable blue light emission.
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