Quantum conductance fluctuations in self-aligned, pinch-narrowed silicon metal-oxide-semiconductor field-effect transistors

Abstract

We have investigated the electrical behavior of pinch-narrowed n- and p-channel accumulation mode metal-oxide-semiconductor field-effect transistors. The devices were fabricated using a conventional twin well complementary metal-oxide-semiconductor process with gate widths smaller than 2 μm. The well known signature of mesoscopic behavior, nonmonotonic variation in the channel conductance versus gate voltage, is observed below 8 K in the p-channel devices. The amplitude of the fluctuations is consistent with the predictions of quantum conductance fluctuations.