Abstract
Modern quantum chemical methods can be used to investigate many properties of novel molecules and materials with predictive power. We have carried out accurate quantum chemical calculations with cluster models to investigate chemical reactions on semiconductor surfaces. The structure–property relationships that emerge from these studies are illustrated with particular emphasis on silicon as well as indium phosphide surface chemistry. Some new strategies that we have developed to provide a proper balance between covalent and dative bonding in compound semiconductors are discussed. Embedded cluster models have been used in some cases to include the effects of the surroundings on the active region. The structural and mechanistic understanding that emerges from our studies is illustrated by selected results on atomic layer deposition of Al2O3 on silicon and hydrogenation of P-rich and In-rich indium phosphide surfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
