Abstract
Ballistic constrictions are fabricated on a high-mobility Si/SiGe strained-layer heterostructure which exhibit conductance quantization in units of 4e2/h at T=4.2 K. Under finite drain voltage a half-plateau develops at 2e2/h and a series of oscillations appear which enable us to extract the energy separation ΔEN+1,N between successive one-dimensional subbands. The result is ΔE2,1=2.0 meV and ΔE3,2=1.4 meV.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
