Abstract
Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.
Highlights
Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods
Due to the interactions from the substrate, a much large exchange field and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system
Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications
Summary
Berry curvature of the graphene/RbMnCl3 and heterostructures. The peaks of the Berry curvature are primarily located at the k points with the SOC-induced band gaps. Other than exerting vertical stress, doping heavy atoms to the graphene is explored to enlarge the Rashba SOC interaction in the heterostructure. The quantized Hall conductivity platform appears when the EF passes the SOC-induced bulk band gap, confirming the existence of the QAH effect in this proposed system. The above proposed topologically nontrivial bulk band gap corresponds to a temperature around 100 K, which is promising for high temperature operations and practical applications of graphene-based QAH effect. The calculated Berry curvature, Chern number, and anomalous Hall conductivity indicate that the system can present QAH effect. (c) and (d): the distribution of the Berry curvature in the momentum space and the calculated anomalous Hall conductivity σ xy as a function of the Fermi level for the graphene/RbMnCl3 heterostructure with Hf atoms adsorbed, respectively The red dots denote Berry curvatures along high symmetry lines. (c) and (d): the distribution of the Berry curvature in the momentum space and the calculated anomalous Hall conductivity σ xy as a function of the Fermi level for the graphene/RbMnCl3 heterostructure with Hf atoms adsorbed, respectively
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