Abstract
The quantum and transport mobilities of electrons in modulation-doped GaAs/Ga1−xAlxAs multiple quantum wells with well widths in the range between 51 and 145 Å and carrier density of about 1×1016 m−;2 have been investigated by magnetotransport measurements. The magnetic field dependence of the amplitude of the quantum oscillations in both magnetoresistance and Hall resistance have been used to determine the quantum (τq) and transport (τt) lifetimes (and hence the quantum (μq) and transport (μt) mobilities) of 2D electrons. The values thus found for μt are substantially smaller than those of the Hall mobility (μH) as obtained in the ohmic regime at low magnetic fields. The discrepancy between μt and μH has been explained in terms of a transport lifetime τt that depends on the electron energy due to the scattering of electrons by interface roughness in the quantum wells.
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