Abstract
This paper presents a quantum analytical modeling of UTBB SOIMOSFET as lateral dual gate for the first time. In this paper, a 2-dimensional analytical modeling of electric field distribution, threshold voltage (Vth), surface potential and drain current (ID) have been developed and then including Quantum mechanical effects (QMEs)in it. The proposed model provides an expression for Vth shift due to QMEs, which can be used for compact modeling as a quantum correction term. The results of quantum analytical modeling have been verified with the results achieved from numerical TCAD device simulator. Different analog/ radio frequency (RF) performance parameters like transconductance (gm), output resistance (RO), transconductance generation factor (TGF), intrinsic gain (gm*RO), cut-off frequency (fT), gain bandwidth product (GBW), maximum frequency of oscillation (fmax) etc. has been investigated. The effect of negative voltage on the control gate on RF/analog performance parameters has been studied. Result reveals that the potential of UTTB SOI MOSFET with lateral dual gate becomes a choice for analog and mixed signal SOC applications.
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