Abstract
Our previous work analytically establishes that silicon-on-nothing (SON) is superior to silicon-on-insulator MOSFET because of its higher immunity to different short-channel effects and increased current driving capability. Moreover, it has also been shown that our analytical model agrees with various simulation results obtained from MEDICI, ATLAS 2-D, and so on. Because of the ultrathin device structure, classical models are not sufficient to determine accurately potential profile, threshold voltage, or charge inversion phenomena for dual-material double-gate (DMDG) SON MOSFET. Hence, in this paper, for the first time, carrier quantization arising due to the ultrathin body has been included to develop an analytical model for ultrathin low-dimensional DMDG SON structure. The 2-D Poisson and 1-D Schrodinger equations have been solved under the dual-material front gate to find the overall potential and inversion charge profile. The deviation of the quantum threshold voltage from the classical one has been calculated and added to the classical threshold voltage to get its quantum counterpart. The proposed model has also been validated against the numerical device simulator ATLAS 2-D.
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