Abstract
The basic results for electron scattering in k -space, under soft photon emission leading to infrared divergent coupling of the system to “the electromagnetic field, are reviewed. The resulting fluctuations in scattering rates lead to mobility fluctuations which satisfy Hooge's formula. Explicit expressions for the Hooge parameter have been derived for scattering with ionized impurities and for acoustical phonon, optical phonon, polar optical phonon, and intervalley scattering. The results are evaluated by computer, and the overall mobility and weighted Hooge parameter are determined for n-type silicon and n-type gallium arsenide from cryogenic temperatures up to 300K. Good agreement with available experimental data mainly based on measurements by Bisschop (Eindhoven), van der Ziel (Minnesota), and Andrian (Florida) is obtained. This is the first detailed computation of the Hooge parameter and derivation of Hooge's law.
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