Abstract
Low-frequency noise has been investigated for epitaxial lateral overgrown (ELO) gallium nitride (ELO-GaN). The noise parameter α evaluated was about 2. The coherent piezoelectric quantum 1/f noise theory was applied to model the experimentally obtained α and excellent correlation was achieved. The high value of α indicates the significant contribution of the piezoelectric interaction and of the transversal acoustic phonon scattering mechanism.
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