Abstract
We have observed a quantized current in a lateral quantum dot defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. By modulating the tunnel barriers in the 2DEG with two phase shifted RF signals, and employing the Coulomb blockade of electron tunneling, we produced quantized current plateaus in the current-voltage characteristics at integer multiples of ef, where f is the RF frequency. This demonstrates that an integer number of electrons pass through the quantum dot each RF cycle.
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