Abstract
Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current-voltage characteristics in the region of low conductivity of the fabricated Zr/ZrO2/Au memristor structures have been studied in this work. For the first time, the reversible mechanisms of formation/destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in a nanotubular dioxide layer, have been analyzed. An equivalent electrical circuit of a parallel resistor connection have been proposed and discussed to describe the observed memristive behavior of the studied layered structures.
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