Abstract
The performance of pHEMTs is defined by the shape of the quantum well along the channel, as well as by the set of available energy levels in 2DEG and position of Quasi Fermi Level (QFL). Existence of an excessive electric field at the drain end of the channel is a reason for many events that downgrade pHEMT performance. Following our model of tri‐gate p‐HEMT with 120A, and 170A wide channels we were able to control the electron density by changing the QFL position along the channel. As we changed operational voltages at the device terminals (the electrical field was tailored) in pHEMT the gate leakage currents in 3rd and 4th quadrants decreased by 28–50%.
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