Abstract
The characterization of GaP crystals, grown by the liquid encapsulated Czochralski method, has been accomplished by means of a quantitative photoelastic technique. Two kinds of radiation with wavelengths, 0.55 and 1.1 μm, are effectively used to determine the isochromatic line corresponding to the zeroth order of retardation. Residual stress is determined by using piezo-optical coefficients calculated in various coordinate systems. It has been found that the diameter control of crystals is effective to reduce the residual stress, and also that the crystallographic symmetry of principal stress lines is related with the pulling direction of the crystal.
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