Abstract
Quantitative measurement of microwave sheet resistance by a novel type of near-field microwave microscope—Evanescent Microwave Probe (EMP)—has been demonstrated. The data cover a wide range of sheet resistance from the metal limit to the insulator limit. Both finite element analysis (FEA) and a simple coaxial ring model have been shown to fit the data well. The demonstration of sheet resistance measurement with high spatial resolution in the GHz range shows the potential of EMP for semiconductor metrology applications. The data also reveal issues related to the large penetration depth, allowing substrate properties to affect the signal.
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