Abstract
AbstractA quadrupole‐based SIMS system has been used for the localized impurity analysis of GaAs. Spectral interferences are reduced by using a mass filtered primary ion beam and UHV conditions in the target chamber with energy discrimination of the secondary ions. Practical detection limits for 12 elements have been determined with samples calibrated by other methods. Detection limits for important impurities in GaAs range from 1014 atoms cm−3 for Cr and Mn to 1016 atoms cm−3 for Si, Zn and Sn. Depth profiles are presented which demonstrate that this detection capability is attained with micron thick layers. Confirmatory evidence of profile shapes and impurity concentrations has been obtained from independent electrical data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
