Abstract
The Stranski-Krastanow transition from two- to three-dimensional growth describes the onset of roughening and the formation of islands. For InAs/GaAs, islanding occurs abruptly for a deposition of about one unit cell of InAs. We combine scanning transmission electron microscopy and X-ray elemental mapping to measure the layer thicknesses and chemical compositions of thin layers of InAs deposited on GaAs(001) for nominal thicknesses of 1.6, 1.8 and 2.0 monolayers of InAs. Different methods to analyse ratios of such elemental maps have been compared to measure quantitatively the indium content within these ultra-thin layers. The most accurate and reliable of the three methods investigated is shown to be the analysis of the inverse slope of plots of As/In ratio maps versus scan window size perpendicular to the layers.
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