Quantitative investigation of copper/indium multilayer thin film reactions

Abstract

Solid state devices based on copper indium diselenide, (CIS), have produced world record efficiencies for polycrystalline photovoltaic solar cells. In order to understand thin film phase transformations that are relevant to the production of CIS, multilayer thin films of copper and indium have been analyzed. Using differential scanning calorimetry, X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy, the reaction pathways for equal atomic concentration, copper rich, and indium rich films were established. Indium was found to react during deposition, so that the as-deposited films consisted of CuIn 2 and copper. During constant heat rate experiments, the excess concentration of copper within the film provided the driving force in the formation of phases richer in copper. The Cu 11In 9 phase was observed to form from CuIn 2 and Cu at 130 °C, and Cu 7In 3 formed from Cu 11In 9 and Cu at 310 °C. In the indium rich samples, a given phase was found to be stable until melting. In films with an overall indium concentration exceeding the concentration of Cu 11In 9, the excess indium was shown to move primarily to the film surface, and in indium rich films, to grain boundaries between the Cu 11In 9 phase.