Abstract
Results of measurements of carrier density by the Shubnikov-de Haas effect and by the Hall effect in n-type crystalline and amorphous samples of cadmium arsenide are provided in the literature. In the case of crystalline thin films of Cd3As2 the carrier densities are the same, whereas in the case of amorphous thin films of Cd3As2 the density deduced from the Hall effect is much smaller than that deduced from the Shubnikov-de Haas effect. It is shown that a model of long-range fluctuations in potential, which are characterized by a disorder parameter Γ, can quantitatively account, for the first time, of the observed results.
Published Version
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