Abstract
Elastic strains and layer compositions of semiconductor quantum dots are quantified by the measurement of lattice fringe spacings from high-resolution micrographs. Analyses of simulated images, taking thin-specimen relaxation into account by application of finite element simulations, demonstrate that the local slopes of these strain profiles may contain severe artefacts mainly caused by local crystal tilts. Nevertheless, average strain values may be measured with sufficient accuracy and can be used to obtain an estimate on average layer compositions by application of the continuum theory of elasticity when analysing experimental micrographs. Focusing on In(x)Ga1-xAs/GaAs and Ge(x)Si1-x/Si heterostructures, it is demonstrated that elastic strains of nanoscale coherent islands are severely decreased due to an elastic relaxation mechanism compared to fully strained two-dimensional layers. The analysis of self-assembled quantum dots and two-dimensional wetting layers buried by capping layers gives clear evidence for a substantial reduction of the lattice strains compared to the values expected for the nominal layer stoichiometries. This observation originates most presumably from a compositional intermixing during epitaxial growth.
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