Abstract

In the context of the methodological studies aimed to give a quantitative evaluation of composition basing on High Angle Annular Dark Field (HAADF) STEM imaging, I propose to afford quantitatively the effect of a strain field varying along the electron propagation direction. I propose, as a case study, the well known surface strain relaxation in a STEM specimen comprising an InGaAs- GaAs Quantum Well. I will demonstrate, by means of experiments and simulation that, surface strain relaxation produce characteristic intensity dips at the sides of the QW not ascribable to chemical effects. The origin of this contrast will be correlated with the characteristic phenomenon of channelling in zone axis conditions.

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