Quantitative electron microscopy of InN–GaN alloys

Abstract

AbstractThe local element distribution in quantum wells largely affects physical properties of devices made from such materials. In the past, quantitative electron microscopy was developed to access the stoichiometry on an atomic scale as shown on the cover page of this issue's Editor's Choice [1] for the GaN/InxGa1–xN/GaN and the GaAs/AlxGa1–xAs/GaAs system by the application of QUANTITEM and Chemical Imaging, respectively. In case of GaN/InxGa1–xN/GaN local strain mapping allows for extracting similar data and an unusual large indium fluctuation can be observed if compared with the aluminum distribution in GaAs/AlxGa1–xAs/GaAs quantum well structures. However, radiation damage, sample preparation and microscope stability affect the data analyses and it is of essence to monitor and control such effects as outlined in the related paper.The first author Til Bartel is a PhD candidate in physics at the Technical University of Berlin, currently visiting LBNL in California to apply transmission electron microscopy to III‐nitride semiconductors. Christian Kisielowski is Staff Scientist and Principle Investigator at the National Center for Electron Microscopy (NCEM) and is responsible for the development and application of high resolution electron microscopy.The present special issue of physica status solidi (a) is a compilation of presentations from the recent symposium on Indium Nitride and Indium Rich Related Alloys at the E‐MRS 2005 Fall Meeting in Warsaw.