Abstract
A new Monte Carlo simulation has been applied to the electron microprobe analysis of thin films at energies from 1–10 keV. The simulation model utilizes the Mott cross section for elastic scattering and the modified Bethe equation of Rao Sahib–Wittry for energy loss, instead of the screened Rutherford cross section and the standard Bethe equation, respectively. The new model has been examined in comparison with experimental results for the most probable angle of transmitted electrons through a thin film, and also the depth distribution of x-ray production. Finally, the simulation was applied to thickness analysis of both aluminum and gold films on a sapphire substrate. The new results show good agreement with experimental data. It follows that the new Monte Carlo simulation is useful for electron microprobe analysis of elements, especially for heavy materials at relatively low energies.
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