Abstract
A simple method to measure the static dielectric constant of thin films with nanometricspatial resolution is presented. The dielectric constant is extracted from DCelectrostatic force measurements with the use of an accurate analytical model.The method is validated here on thin silicon dioxide films (8 nm thick, dielectricconstant∼4) and purple membrane monolayers (6 nm thick, dielectricconstant∼2), providing results in excellent agreement with those recently obtained by nanoscalecapacitance microscopy using a current-sensing approach. The main advantage of the forcedetection approach resides in its simplicity and direct application on any commercialatomic force microscope with no need of additional sophisticated electronics, thus beingeasily available to researchers in materials science, biophysics and semiconductortechnology.
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