Year-end Sale % OFF 
Abstract
The peak positions in photoluminescence spectra of Ge wetting layers (WL) deposited at 700 °C were measured versus the Ge coverage with an extremely high relative resolution of 0.025 monolayers. A nearly linear redshift of the peaks with increasing Ge coverage is observed. We derived quantitative WL composition profiles by fitting this shift, and its dependence on the deposition temperature of the capping layer (Tc), to results of band structure calculations. Despite the high growth temperature, the Ge content in the WL exceeds 80%. It is shown that the composition profile is dominated by surface segregation of Ge on Si.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
