Abstract
We studied the electrical activation of Si+ ions implanted at multiple energies (80 and 180keV) and with a total fluence up to 2.7×1014cm−2 in heteroepitaxial GaN films on sapphire. Calibrated scanning capacitance microscopy (SCM) is proposed as a method to measure the depth carrier profile after high temperature annealing (1100–1200°C). Si electrically active fractions of 18% and 36% were obtained after low ramp rate furnace annealing at 1100 and 1200°C, respectively. Interestingly, the dopant activation was significantly improved to 63% in the case of a rapid pre-annealing process at 1100°C before the 1200°C furnace annealing process. Furthermore, the ionised carrier fluence obtained by Hall measurements at room temperature exhibits a significant improvement for the 1100°C RTA pre-annealed sample. This value is in good agreement with the ionised fluence calculated from the active Si profile from SCM, considering a ∼20meV ionisation energy for Si donors in GaN.
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