Abstract
Secondary Neutral Mass Spectrometry (SNMS) has been applied to the quantitative compositional analysis as a function of depth of AlxGa1-xAs material systems. The technique described utilizes Ar+ ions from a high frequency, low pressure plasma for sputtering the sample surface. Low primary ion energies (typically 200 eV), coupled with high sample current densities (1-2 mA/cm2) allow rapid, high resolution depth profiling since atomic mixing and knock-on effects are minimized. Sputtered neutrals are post-ionized in the plasma by electron bombardment. The well-known matrix effects which limit quantitation in Secondary Ion Mass Spectrometry (SIMS), are negligible in SNMS. The sensitivity factor for Al is found to be independent of sample composition, x.
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