Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

Abstract

In this work, the conductance method with an optimized circuit model is established to investigate the trapped charges at the ferroelectric/dielectric (FE/DE) interface. The density of interface states is quantitatively characterized to be $\sim 4 \times 10^{12}$ to 1013 cm $^{-2}\cdot eV^{-1}$ . And the injection and accumulation of these enormous interfacial charges play a key role in the operation of the FE/DE stack. The proposed measurement technique provides a comprehensive understanding of the FE/DE stack as well as some new insights of negative capacitance effect and ferroelectric field-effect transistor device operations.