Quantitative boron determination in doped SiO2 films by SIMS

Abstract

The boron concentration of boron-doped CVD and boron-implanted, thermally grown SiO2 films has been determined using SIMS. In the SIMS study two procedures have been employed to determine the concentration-depth profile, one using the boron concentration obtained by methods other than SIMS (i.e. IR absorption and ion implantation), and the other using the secondary-ion current versus sputtering time distributions for Si+ and B+ and the ratio alpha +(11B)/ alpha +(28Si) (where alpha +(11B) and alpha +(28Si) are degrees of ionisation for B and Si respectively). The alpha +(11B)/ alpha (28Si) ratio was experimentally determined both for CVD and for boron-implanted, thermally grown SiO2 films.