Abstract
Quantitative procedures for AES analysis and composition depth profiling of semiconductor heterostructures based on III-V pseudobinary compounds are demonstrated. The procedure involves the extraction of pre-filtered elastic Auger currents by linear digital filtering of the secondary electron spectra; this is followed by spectrum synthesis. Digitally filtered spectra of binary, as well as ternary compounds, can serve as external standards. The non-linear least-squares fitting technique is used to compensate some effects of sample charging and misalignment of the Auger spectrometer.
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