Abstract

Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is ≊ 3×1018 cm−3 for as-grown layers only 10 nm in thickness.

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