Quantitative Analysis of the Density of Trap States in Semiconductors by Electrical Transport Measurements on Low-Voltage Field-Effect Transistors

Abstract

Organic thin-film transistors are especially apt for mobile and wearable electronics, in which low-voltage operation is a critical prerequisite. The charge transport in organic semiconductors is significantly governed by the density and energetic distribution of trap states. The authors extend an established method for determining the density of trap states to transistors with low operating voltage, and thus thin layers of gate dielectric. This approach helps to study the fundamental physics of organic semiconductors, and to improve the performance of devices based on them.