Abstract
AbstractThe dielectric loss function of ZrO2 over 0–80 eV has been determined from a quantitative analysis of reflection electron energy loss spectra (REELS) at different primary energies. From this, the inelastic electron mean free path for 200–2000 eV electrons in ZrO2 has been calculated. The inelastic mean free path (IMPF) is found to depend on the depth from which the electron is backscattered. For great depths, the IMFP approaches a constant value which is the same as that which would be obtained within a model that ignores the effects of the surface. The derived IMFP values have been compared to different formulae presented in the literature and the TPP2 formula due to Tanuma et al. is found to give the best agreement with the present results.
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