Abstract
Abstract The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the faceted growth were both higher than during non-faceted growth. On the other hand, fluctuations of the microscopic growth rate were about the same in magnitude and periodicity in the two growth regions.
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