Abstract
The authors present a model to analyze hysteresis in transfer characteristics (TCs) of single-wall carbon nanotube field-effect transistors, based on capacitive charging of the surrounding dielectric by charges injected out of the nanotube. The model identifies the extent and time scale of the hysteresis and correctly describes the dependence of the magnitude of hysteresis on common experimental parameters. The authors propose and experimentally establish a “time-decay” experiment for obtaining accurate device properties in hysteresis-affected devices without actually measuring TCs. The authors further show that values obtained by this method can be used to precisely predict TCs for the same device under different experimental parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
