Abstract
LASIL-ICP-OES is used to determine the stoichiometry of gadolinium doped cerium oxide thin films ranging from 220 to 14 nm with high accuracy and precision.
Highlights
Inorganic thin lms based on metallic or ceramic materials already nd widespread technological application as functional layers in optical, electronic or electrochemical devices[1,2,3] or as passive layers to obtain special surface properties or improved tribological behaviour.[4]
In the eld of solid sampling there is a great variety of techniques starting with X-ray based methods, such as X-ray photo electron spectroscopy (XPS) and energy dispersive X-ray microanalysis (SEM-EDX), leading to secondary ion mass spectrometry (SIMS), glow discharge-mass spectrometry (GD-MS), and laser ablation inductively coupled plasma-mass spectrometry (LA-ICP-MS).[6]
Due to the short dwell time used in this experiment, elements from the substrate (Y and Zr) with strong emission lines and high concentration were monitored instead of elements of the gadolinium doped cerium oxide (GDC) thin lm
Summary
Inorganic thin lms based on metallic or ceramic materials already nd widespread technological application as functional layers in optical, electronic or electrochemical devices[1,2,3] or as passive layers to obtain special surface properties or improved tribological behaviour.[4] Quantitative elemental analysis of inorganic thin lms in the nm range is a challenging task. In the eld of solid sampling there is a great variety of techniques starting with X-ray based methods, such as X-ray photo electron spectroscopy (XPS) and energy dispersive X-ray microanalysis (SEM-EDX), leading to secondary ion mass spectrometry (SIMS), glow discharge-mass spectrometry (GD-MS), and laser ablation inductively coupled plasma-mass spectrometry (LA-ICP-MS).[6] Solid sampling techniques usually provide the great advantage of enabling laterally resolved information and depth pro les, whereas quanti cation of the obtained data can be challenging.
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