Year-end Sale % OFF 
Abstract
Adhesion of the SiCN barrier layer and Cu film interface is one of the important characteristics that reflect the interfacial structure. NH3 plasma treatment of the Cu surface is a well-known way of improving adhesion. The results of X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) depth profiles indicate that the plasma treatment imparts a difference to the formation of the interface with SiCN. Adhesion properties are regarded as fracture energies measured by double cantilever beam (DCB) and 4-point bending (4PB) techniques. The influence of the NH3 plasma treatment of the Cu surface on adhesion is quantitatively discussed. The treated samples showed approximately twice the fracture energy of the non-treated samples. After 4PB and DCB measurements, fracture surfaces were investigated by XPS and atomic force microscopy (AFM). The formation of a N-Cu chemical bond on the Cu surface was enhanced as a result of removing oxygen by the plasma treatment. N-Cu chemical bonding contributes substantially to better SiCN/Cu interfacial adhesion.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Transactions of The Japan Institute of Electronics Packaging
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
