Abstract
Noble gas (He, Ar, Kr, and Xe) van der Waals (vdW) complexes of I2 formed in axiosymmetric, pulsed jet expansions were studied by absorption using intracavity laser spectroscopy (ILS). Absorption spectra of I2He, I2Ar, I2Ar2, and I2Ar3 as well as previously undetected I2Kr, I2Kr2, I2Kr3, I2Xe, and I2Xe2 were recorded using B(3Π+0u)←X transitions (Figs. 2–4 and Table I). The formation efficiencies of nine I2–noble gas vdW complexes were studied as a function of expansion conditions (Table II). Comparisons of absorption and laser-induced fluorescence data provide an analysis of excited-state dissociation mechanisms for the overall He, Ar, Kr, and Xe chemical series and as a function of vibrational level populated in the B(3Π+0u) state for I2He and I2Ar. The competition between the electronic and vibrational predissociation of the vdW complex is discussed with respect to absorption data.
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