Abstract
AbstractPlasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here, the ability to exclude the thermal effect and detect the generation of non‐thermal hot carriers by surface plasmon is demonstrated using an AlGaN/GaN high‐electron‐mobility transistor. This ultrasensitive platform, which demonstrates at least two orders of magnitude more sensitivity compared to the previous reports, can detect the hot carriers generated from discrete nanostructures illuminated by a continuous wave light. The quantitative measurements of hot carrier generation also open a new way to optimize the plasmonic nanoantenna design in many applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
