Abstract

A new method is proposed to quantify the local dislocation spacings on sections displaying the intersections of dislocation lines. The method was applied to dislocation structures in single crystals of CaF2 introduced by deformation at elevated temperature and made visible by etch pits. The method yields the frequency distributions and the spatial distributions of dislocation spacings. For cellular dislocation structures the method provides a quantitative and objective characterization in terms of frequency distribution of dislocation spacings in cell boundaries and cell interiors and of cell size.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.