Abstract
Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb∕InAs heterostructure. This enabled independent quantitative mapping of changes in the In–Ga and As–Sb contents across interfacial regions ∼0.6nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb‐on‐InAs interface is confined to the In–Ga sublattice. Also, atomic scale roughness within the As–Sb sublattice of the InAs‐on‐InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice.
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