Abstract
A photoluminescence method is proposed for quantification of N in Czochralski-grown Si. We transformed N impurities on the order of 1013–1015 cm-3 into radiative centers responsible for the A-line at 1.1223 eV by forming an isoelectronic Al–N pair using Al ion implantation. The relative intensity of the A-line to the free exciton line increases with the N concentration. We suggest that this relationship can be used as a calibration curve for quantifying N impurities. Effect of dopant and O impurities and appropriate annealing conditions after ion implantation are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
