Abstract

The nitrogen implanted profile in aluminum generated by 60keV N2+ bombardment is simulated numerically by the Stopping and Range of Ions in Matter (SRIM) program and is fitted analytically by the Schulz-Wittmaack expression. Taking the SRIM simulated profile as true concentration-depth profile of implanted nitrogen in aluminum matrix, the corresponding measured AES depth profiling data of implanted nitrogen are well fitted by the Mixing-Roughness-Information (MRI) model.

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