Abstract
The effectiveness of a forward scattering method for non-destructively detecting surface hydrogen has been enhanced and applied. A collimated 2.5 MeV 4He beam is used to profile the hydrogen content in thin films and the surface of materials. The 4He beam is directed on the sample at a glancing angle of 15° to the surface and the scattered hydrogen atoms are detected at an angle of 30° to the beam direction. The loss of energy by the 4He ion as it traverses the material and the subsequent energy transferred to the hydrogen atom defines the hydrogen profile in the measured energy spectrum. The atomic concentration of hydrogen is obtained from comparisons with hydrogen energy spectra collected from silicon wafers implanted with controlled dosages of hydrogen. The method can be used to detect surface hydrogen at a sensitivity of approximately 0.01 at.% to depths of 1.0 μm. Results obtained using this method on a number of test samples are presented.
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