Abstract
ABSTRACTThermal wave imaging can be used as a rapid non-destructive in-line probe to monitor defects in metals. In the study of the Ti-polysilicon system, this technique has been used to quantify the degradation of the suicide film by monitoring the formation of a second phase during BPSG annealing. The amount of second phase formed was found to vary with Ti preclean, dopant concentration and temperature of BPSG anneal on both blanket and patterned wafers. The second phase has been identified using TEM and AES to be a silicon rich phase. Digitized thermal wave images were used to obtain information regarding the size distribution of precipitates. These distributions have been correlated with resistivity changes in submicron suicide lines.
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