Abstract
The results of studying radiation-stimulated changes in the electrical characteristics of surfacebarrier structures based on p-Si with different values of resistivity (24 and 10 Ω cm) are reported. The state of the surface of the samples under study has been analyzed using atomic-force microscopy. It is shown that irradiation leads to the evolution of structural defects and a variation in the charge state of already existing defects in the structures based on solar-grade silicon (24 Ω cm). Pyramidal defects are formed in the surface layer of p-Si:B (ρ = 24 Ω cm) and partially change their structure as a result of irradiation with X-ray quanta.
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