Abstract
In this work, a new buffer layer material, a bismuth-indium (Bi-In) alloy, was utilized to improve the quality of large-area, laser-induced periodic ripple structures on silicon. Better-defined ripple structures and larger modification areas were obtained at different scanning speeds by pre-depositing a Bi-In film. The single-spot investigations indicated that ripple structures were much easier to form on silicon coated with the Bi-In film under laser fluences of 2.04 and 2.55 J/cm2 at a fixed pulse number of 200 in comparison with on bare silicon. A physical model in terms of the excellent thermal conductivity contributed by the free electrons in the Bi-In film homogenizing the thermal distribution caused by the laser irradiation in the early stage of the formation of laser-induced periodic surface structures was proposed to explain the above phenomena. The results show that the Bi-In film enabled a wider range of laser fluences to generate periodic structures and helped to form regular ripple structures on the silicon. In addition, the modulation effects of the laser fluence and pulse number on surface structures were studied experimentally and are discussed in detail.
Highlights
Since Birnbaum obtained surface periodic structures by using pulsed laser irradiation on a semiconductor surface in 1960 [1], laser-induced periodic surface structures (LIPSSs) have been studied extensively due to their simple and fast fabrication process compared with conventional lithography technology
A single-spot investigation is required to obtain a detailed analysis of the effect of laser fluence on the formation process before the line-like or area-like generation of LIPSSs
For silicon with a pre-deposited Bi-In film, as shown in Figure 2e, the alloy film on the silicon was removed with only a laser fluence of 1.02 J/cm2
Summary
Since Birnbaum obtained surface periodic structures by using pulsed laser irradiation on a semiconductor surface in 1960 [1], laser-induced periodic surface structures (LIPSSs) have been studied extensively due to their simple and fast fabrication process compared with conventional lithography technology. Depositing gold film as a buffer layer is another promising method, as shown be Feng et al, who obtained large-area uniform structures on silicon [24]. Liquid metals are referred to as metals and alloys with melting points below 330 ◦ C [28], including post-transition and zinc group metals, such as indium (In), bismuth (Bi), and tin (Sn) These metal alloys with different morphologies and properties offer extraordinary capabilities regarding the synthesis of new materials [29]. The experimental results proved the validity of the buffer layer for improving the quality of LIPSSs. A physical model in terms of the high thermal conductivity contributed by the free electrons in the metal film that homogenize the thermal distribution caused by laser irradiation in the early stage of the formation of LIPSSs was proposed for theoretical analysis. The effects of the laser fluence on the period and the laser pulse number on the depth were revealed experimentally
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