Abstract
The conventional thermal chemical vapor deposition (T-CVD) equipment takes a long time to synthesize a thin film, which is the stumbling block in the commercialization of monolayer graphene. Rapid thermal chemical vapor deposition (RT-CVD) equipment is suitable for rapid graphene synthesis on most surfaces of large area transition metals. The initial graphene domains synthesized by RT-CVD were visualized and compared with graphene synthesized by T-CVD. The number of graphene domains grown by RT-CVD was approximately 12.31% larger than those synthesized by T-CVD. The surface of the thermally treated metal substrate determines the density and shape of the graphene domains due to the reduced surface irregularities and hence flattens. As a result of the thermal treatment of the copper foil, the ID/IG value of RT-CVD graphene decreased by 12.5%. Thus, it was confirmed that the electrical characteristics were improved as the average value of the sheet resistance reduced by 15.8%.
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